Abstract
Integrating graphene into device architectures requires interfacing graphene with dielectric materials1,2,3. However, the dewetting and thermal instability of dielectric layers on top of graphene makes fabricating continuous graphene/dielectric interfaces challenging4,5,6,7,8,9. Here, we show that yttria (Y2O3)—a high-κ dielectric—can form a complete monolayer on platinum-supported graphene. The monolayer interacts weakly with graphene, but is stable to high temperatures. Scanning tunnelling microscopy reveals that the yttria layer exhibits a two-dimensional hexagonal lattice rotated by 30° relative to the hexagonal graphene lattice. X-ray photoemission spectroscopy measurements indicate a shift of the Fermi level in graphene on yttria deposition, which suggests that dielectric layers could be used for charge doping of metal-supported graphene.
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Acknowledgements
The authors acknowledge financial support from the Office of Naval Research (N00014-10-1-0668 and N00014-11-1-0779) and the National Science Foundation (DMR-1204924).
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R.A. performed STM and XPS experiments, analysed the data, and prepared figures. A.D. performed and analysed Auger measurements. M.B. conceived the experiment and wrote the manuscript.
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Addou, R., Dahal, A. & Batzill, M. Growth of a two-dimensional dielectric monolayer on quasi-freestanding graphene. Nature Nanotech 8, 41–45 (2013). https://doi.org/10.1038/nnano.2012.217
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DOI: https://doi.org/10.1038/nnano.2012.217
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