Abstract
Structural DNA nanotechnology can be programmed into complex designer structures with molecular precision for directing a wide range of inorganic and biological materials. However, the use of DNA-templated approaches for the fabrication and performance requirements of ultra-scaled semiconductor electronics is limited by its assembly disorder and destructive interface composition. In this protocol, using carbon nanotubes (CNTs) as model semiconductors, we provide a stepwise process to build ultra-scaled, high-performance field-effect transistors (FETs) from micron-scale three-dimensional DNA templates. We apply the approach to assemble CNT arrays with uniform pitches scaled between 24.1 and 10.4 nm with yields of more than 95%, which exceeds the resolution limits of conventional lithography. To achieve highly clean CNT interfaces, we detail a rinsing-after-fixing step to remove residual DNA template and salt contaminations present around the contact and the channel regions, without modifying the alignment of the CNT arrays. The DNA-templated CNT FETs display both high on-state current (4–15 μA per CNT) and small subthreshold swing (60–100 mV per decade), which are superior to previous examples of biotemplated electronics and match the performance metrics of high-performance, silicon-based electronics. The scalable assembly of defect-free three-dimensional DNA templates requires 1 week and the CNT arrays can be synthesized within half a day. The interface engineering requires 1–2 d, while the fabrication of high-performance FET and logic gate circuits requires 2–4 d. The structural and performance characterizations of molecular-precise DNA self-assembly and high-performance electronics requires 1–2 d. The protocol is suited for users with expertise in DNA nanotechnology and semiconductor electronics.
Key points
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One-pot multistage isothermal annealing assembles DNA bricks into templates to which single-stranded DNAs/carbon nanotubes are hybridized. Source and drain electrodes and Y2O3 and HfO2 for the gate dielectrics of the field-effect transistors are layered via e-beam lithography, e-beam evaporation and atomic layer deposition.
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Nanometer-sized DNA features fall below the resolution of conventional lithography. The resulting field-effect transistor channel pitches are smaller than typical silicon-based electronics, yet display high on-state current and small subthreshold swing.
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Acknowledgements
Y.C., M.Z., Y.O., Z.L., K.W., Z. Zhang and W.S. acknowledge the National Key R&D Program of China (2021YFF1200300, 2020YFA0714703), the National Science Foundation of China (grant nos. 21875003, 21991134 and T2125001), Beijing Municipal Science and Technology Commission (grant no. JQ20007), Peking University, and Zhangjiang Laboratory for financial support. Y.C., S.Z., C.Y. and Z. Zhu acknowledge the National Natural Science Foundation of China (grant nos. 21974113, 21735004 and 21521004), National Key R&D Program of China (2021YFA0909400) and the Fundamental Research Funds for the Central Universities (20720210001). Y.L. acknowledges City University of Hong Kong for financial support. J.S. acknowledges the National Key R&D Program of China (2022YFB3503700) and the National Science Foundation of China (grant no. 22271003). We acknowledge the Peking Nanofab for the support of device fabrication.
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Y.C. and M.Z. developed the protocol, conducted the whole experiments, interpreted the data and wrote the manuscript. Y.O., S.Z., Z.L., K.W. and Z. Zhang contributed to the protocol development, conducted the experiments and analyzed the data. Y.L. and C.Y. analyzed the data and supervised the study. W.S. conceived, designed and supervised the study, interpreted the data and wrote the manuscript. J.S. designed and supervised the study, and interpreted the data. Z. Zhu designed, supervised the study, interpreted the data and wrote the manuscript. All the authors edited the manuscript.
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Nature Protocols thanks Mihai Irimia and Haitao Liu for their contribution to the peer review of this work.
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Key references using this protocol
Ke, Y. et al. Nat. Chem. 6, 994–1002 (2014): https://doi.org/10.1038/nchem.2083
Sun, W. et al. Science 368, 874–877 (2020): https://doi.org/10.1126/science.aaz7440
Zhao, M. et al. Science 368, 878–881 (2020): https://doi.org/10.1126/science.aaz7435
Shen, J. et al. Nat. Mater. 20, 683–690 (2021): https://doi.org/10.1038/s41563-021-00930-7
Chen, Y. et al. Nat. Commun. 13, 2707 (2022): https://doi.org/10.1038/s41467-022-30441-1
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Chen, Y., Zhao, M., Ouyang, Y. et al. Biotemplated precise assembly approach toward ultra-scaled high-performance electronics. Nat Protoc 18, 2975–2997 (2023). https://doi.org/10.1038/s41596-023-00870-3
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DOI: https://doi.org/10.1038/s41596-023-00870-3
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