Volume 5 Issue 12, December 2022

Srabanti Chowdhury and Jungwoo Joh, publicity chairs of the 2022 IEEE International Electron Devices Meeting, tell Nature Electronics about this year’s meeting, which takes place in San Francisco in December.

Two-dimensional semiconductors can be used as a channel material in gate-all-around nanosheet field-effect transistors.

A compact and energy-efficient magnetoresistive random-access memory (MRAM) technology could help lower the power consumption of data storage and management.

High-electron-mobility transistors with a diamond coating on their top and side surfaces can effectively dissipate heat in high-power electronics applications.

By controlling ion-dynamic capacitance, electrolyte-gated transistors can be switched between different operating modes, providing flexible neural network implementations.

An embedded 3D printing technique — which uses an alginate–polyacrylamide hydrogel supporting matrix and a conductive silver–hydrogel ink — can be used to fabricate hydrogel electronic devices containing various different embedded circuits.

Time-resolved magneto-optical Kerr microscopy, combined with micromagnetic simulations, can be used to detect spin–orbit torque switching of the magnetization and exchange bias in platinum/cobalt/iridium–manganese heterostructures on sub-nanosecond timescales.

A van der Waals gap of 5.3 Å can be formed between a hafnium oxide dielectric and molybdenum disulfide channel through oxygen accumulation, which weakens the influence of dielectric defects on the channel material and results in transistors with low hysteresis and steep subthreshold slopes.

Using common solid-state electrolyte films, multimode transistors can be created that exhibit different characteristics—tunable synaptic weights, high apparent mobilities, sharp subthreshold swings and memristive conductances—on demand and could be used create neural networks that function in different modes as needed.

Floating-gate memristive synaptic devices that are fabricated using commercial complementary metal–oxide–semiconductor processes can be used to create energy-efficient restricted Boltzmann machines and deep belief neural networks.

Semiconductor polymer films that are based on a lateral-phase-separation-induced micromesh can be used to create transistors, complementary inverters and bilayer heterojunction photodetectors that can function under applied strains of up to 50%.

Using a conductive silver–hydrogel ink, three-dimensional circuits can be printed into a supporting hydrogel matrix that has a temporary, fluid-like state before curing to make fully encapsulated hydrogel electronics.