Despite their huge commercial success, the physical reasons for the high luminescence efficiency of (In,Ga)N light-emitting diodes are poorly understood. New experiments provide direct evidence for the crucial role of local atomic configurations on the material's high brightness.
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Ultraviolet Lasers Realized via Electrostatic Doping Method
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Brandt, O., Ploog, K. The benefit of disorder. Nature Mater 5, 769–770 (2006). https://doi.org/10.1038/nmat1728
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DOI: https://doi.org/10.1038/nmat1728
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