A theoretical study proposes the use of molecular magnets in a type of transistor in which the flow of collective spin excitations transports and processes information.
This is a preview of subscription content, access via your institution
Relevant articles
Open Access articles citing this article.
-
2D Semiconductor Nanomaterials and Heterostructures: Controlled Synthesis and Functional Applications
Nanoscale Research Letters Open Access 25 May 2021
Access options
Subscribe to this journal
Receive 12 print issues and online access
$259.00 per year
only $21.58 per issue
Buy this article
- Purchase on Springer Link
- Instant access to full article PDF
Prices may be subject to local taxes which are calculated during checkout
References
Baibich, M. N. et al. Phys. Rev. Lett. 61, 2472–2475 (1988).
Binasch, G., Grünberg, P., Sauerenbach, F. & Zinn, W. Phys. Rev. B 39, 4828–4830 (1989).
Van Hoogdalem, K. A. & Loss, D. Phys. Rev. B 88, 024420 (2013).
Meier, F. & Loss, D. Phys. Rev. Lett. 90, 167204 (2003).
Trif, M., Stepanenko, D. & Loss, D. Phys. Rev. Lett. 101, 217201 (2008).
Uchida, K. et al. Nature Mater. 9, 894–897 (2010).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Tserkovnyak, Y. An insulator-based transistor. Nature Nanotech 8, 706–707 (2013). https://doi.org/10.1038/nnano.2013.203
Published:
Issue Date:
DOI: https://doi.org/10.1038/nnano.2013.203
This article is cited by
-
2D Semiconductor Nanomaterials and Heterostructures: Controlled Synthesis and Functional Applications
Nanoscale Research Letters (2021)
-
Spin colossal magnetoresistance in an antiferromagnetic insulator
Nature Materials (2018)