Fig. 4
From: Stateful characterization of resistive switching TiO2 with electron beam induced currents
Pristine device measurements. a Measured energy dependence of the electron beam-induced current (EBIC) signal for the virgin device in standard and inverted devices. The measured current is negative in the standard device and positive in inverted device. The change in sign when flipping the device over is due to reversal of the built-in field. Error bars, reflecting two standard deviations of the mean, are smaller than the markers and are determined from an area of at least 50 × 50 pixel bounding box on each pad. b Monte Carlo simulation results of inverted and standard structure absorbed energy per electron. Standard structure simulation result is shown with negative sign since absorbed energy is not a negative quantity and current direction is determined by structure. c 5 keV EBIC image of a standard device. d 2 keV EBIC image of an inverted device. The strong similarity between the measured and simulated curves show the strong relationship between absorbed energy and generated EBIC current
