Table 1 Anodic Oxidation Conditions for Porous Samples a, b, c, and d.

From: White Light Emission from Fluorescent SiC with Porous Surface

Samples

Sub. types

Dopants

Anodic etching duration

Oxidant

Porous thickness

a

Commercial 6H-SiC substrate (SiC-Sub)

N(background doping level)

960 min

0 mol/L

13 µm

b

Fluorescent 6H-SiC

B, N

960 min

0.015 mol/L

21.4 µm

c

Fluorescent 6H-SiC

B, N

200 min

0.015 mol/L

4.6 µm

d

Fluorescent 6H-SiC

B, N

500 min

0.015 mol/L

10 µm