Figure 1
From: Multibit memory operation of metal-oxide bi-layer memristors
Comparison between TiO2-only devices and AlxOy/TiO2 bilayer devices. (a) SEM micrograph of a memristor device; (b) Schematic representation of a single layer TiO2-based device with platinum top and bottom electrodes; (c) Schematic representation of a bilayer AlxOy/TiO2-based device with platinum top and bottom electrodes; (d) Typical bipolar switching of a device based on the stack pictured in (b) using 100 ns pulses of alternating polarity voltage ramps ranging from 1 to 2 V, with voltage steps of 200 mV; (e) Typical bipolar switching of a device based on the stack pictured in (c) using 100 ns pulses of alternating polarity voltage ramps ranging from 1 to 2 V with voltage steps of 200 mV. The coloured horizontal lines in fig. (d) and (e) denote the average low (LRS) and high resistive state (HRS).
