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Showing 1–6 of 6 results
Advanced filters: Author: "Adrian Ionescu" Clear advanced filters

  • Ferroelectric tunnel junctions can be operated as non-volatile memories with low write powers.

    • Adrian M. Ionescu
    News & Views
    Nature Nanotechnology
    Volume: 7, P: 83-85

  • Negative capacitance effect in a ferroelectric-based gate stack provides an effective solution for hysteresis-free steep-slope  operation in a MoS2 field-effect transistor.

    • Adrian M. Ionescu
    News & Views
    Nature Nanotechnology
    Volume: 13, P: 7-8

  • A CMOS-capable silicon nanowire transistor has been fabricated without any junctions, simplifying its manufacture and improving its performance relative to traditional devices.

    • Adrian M. Ionescu
    News & Views
    Nature Nanotechnology
    Volume: 5, P: 178-179

  • Vanadium dioxide is a strongly correlated material interesting for its ultra-fast resistive switching controlled by an electric-field-driven insulator-metal transition. Here, VO2 stochastic oscillator power sensors for mm-wave to sub-THz radiation are demonstrated, displaying high responsivities, low noise, and a small scalable footprint.

    • Fatemeh Qaderi
    • Teodor Rosca
    • Adrian M. Ionescu
    ResearchOpen Access
    Communications Materials
    Volume: 4, P: 1-12

  • Wearable, real-time devices that can monitor hormones are important for personalized healthcare. Here, a platinum/graphene aptamer extended gate field effect transistor is shown to detect cortisol, the primary stress hormone, in physiological fluid.

    • Shokoofeh Sheibani
    • Luca Capua
    • Adrian M. Ionescu
    ResearchOpen Access
    Communications Materials
    Volume: 2, P: 1-10