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An in-memory computing chip for vector–matrix multiplication and discrete signal processing applications can be fabricated using floating-gate field-effect transistors based on monolayer molybdenum disulfide.

Semiconducting two-dimensional materials might one day be used in scaled semiconductor technology. Andras Kis recounts how the first transistor based on a single layer of molybdenum disulfide was created.

Rhenium disulphide, ReS₂, is a member of the two-dimensional dichalcogenide family. Here, the authors find a suppression of conductivity at high charge density levels in devices with polymer electrolyte gates. The effects of doping and disorder are explored theoretically and experimentally.

Graphene nanoelectromechanical systems enable the study of the interplay between electrical conductivity and mechanical properties. Here, the authors observe oscillations in the electromechanical response of bilayer graphene due to wrinkling, rather than the linear response seen in single layers.

Suitable materials for nanoelectromechanical systems should possess excellent mechanical properties and allow displacement self-sensing. Here, the authors fabricate electromechanical resonators based on single-layer MoS₂ with electrical readout, operating in the very high frequency range.

The electronic band structure of van der Waals crystals is strongly sensitive to the number of layers. Here, the authors observe a thickness-dependent metal-to-semiconductor transition in layered PtSe₂ by means of electrical transport measurements.

In monolayer transition-metal dichalcogenides, lack of inversion symmetry results in spin-split valence and conduction bands, but the small conduction band splitting is hard to probe experimentally. Here, the authors extract a sub-band spacing energy of 0.8 meV in the conduction band of monolayer MoS₂ via quantum transport measurements.

Field-effect transistors based on molybdenum disulphide have latterly garnered significant interest. Their electrical transport characteristics are now studied for different dielectric configurations, and as a function of temperature.

The energy position of the van Hove singularity in a van der Waals flat-band system is detected by tunnelling (photo)currents within a field-effect structure.

The dipole-dependent propagation of hybrid excitons in a van der Waals heterostructure containing a WSe₂ bilayer is characterized by modulating the layer hybridization and interplay between many-body interactions of excitons with an applied vertical electric field.

Deep level transient spectroscopy (DLTS) is an established characterization technique used to study electrically active defects in 3D semiconductors. Here, the authors show that DLTS can also be applied to monolayer semiconductors, enabling in-situ characterization of the energy states of different defects and their interactions.

Magneto-transport measurements on thin metallic crystals of the transition metal dichalcogenide PtSe₂ show signatures of ferro- and antiferromagnetic order depending on the number of layers and first-principles calculations suggest Pt vacancies at the surface as a plausible cause.

2D semiconductors offer a promising platform for the realization of compact and CMOS-compatible optoelectronic components. Here, the authors report the realization of light-emitting diodes based on 2D WSe2 integrated with a planar cavity, showing the electrical control of the emission angle and polarization at room temperature.

A very sensitive photodector based on molybdenum disulphide with potential for integrated optoelectronic circuits, light sensing, biomedical imaging, video recording or spectroscopy is now demonstrated.

Spatially and temporally resolved exciton diffusion experiments on a two-dimensional WSe₂/hBN/MoSe₂ heterostructure are reported, where an excitation-power-dependent exciton diffusion pattern is observed and phenomena with dipole–dipole repulsive interaction are quantitatively modelled.

Logic operations and reconfigurable circuits are demonstrated that can be directly implemented using memory elements based on floating-gate field-effect transistors with monolayer MoS₂ as the active channel material.

Beneficiary defects could be utilized to introduce magnetism into materials that are not intrinsically magnetic. Here, the authors demonstrate long range magnetic order in the air-stable, defective Platinum Diselenide in the ultimate limit of thickness by using proximitized graphene as a probe.

A device capable of inverting the polarization of light by efficient control of interlayer excitons in a van der Waals heterostructure is demonstrated, representing an important step towards implementing logic operations in valleytronics.

Engineering the interlayer coupling in a van der Waals heterostructure enables electrical control over the transport and density of valley-polarized interlayer excitons.

Heterobilayer excitonic devices consisting of two different van der Waals materials, in which excitons are shared between the layers, exhibit electrically controlled switching actions at room temperature.

The large bandgap of a single layer of molybdenum disulphide can be exploited to construct transistors with high on/off ratios and high mobilities.

The ability to control interlayer excitons in van der Waals heterostructures provides a practical way to address the spin and valley degrees of freedom in solid-state devices. This Review surveys the recent progress in this field, with a focus on devices and engineering techniques.

Two-dimensional transition metal dichalcogenides (TMDCs) exhibit attractive electronic and mechanical properties. In this Review, the charge density wave, superconductive and topological phases of TMCDs are discussed, along with their synthesis and applications in devices with enhanced mobility and with the use of strain engineering to improve their properties.

This Review discusses the physics of electrical contacts to 2D semiconductors and the strategies adopted to improve charge injection in these materials. The requirements for efficient spin injection in spintronic devices are also presented.