Mingshan Liu and colleagues fabricate p- and n-channel vertical-type GeSn nanowire MOSFETs and their CMOS components down to 25 nm. The mobility in n-FETs increased 2.5-fold compared to a Ge reference device, a step toward extending Moore’s law beyond the silicon era.
- Mingshan Liu
- Yannik Junk
- Qing-Tai Zhao