Nonvolatile memory devices based on hybrid inorganic/organic nanocomposites have emerged as excellent candidates for promising applications in next-generation electronic and optoelectronic devices because of their advantages of high-mechanical flexibility, simple fabrication and low cost. As shown in the figure, the resistive switching of a nanocomposite sandwiched between two electrodes enables the cross-point where A and B cross to work as a memory cell for data storage. To date, various nanomaterials and device structures have been developed to optimize the memory properties of hybrid nanocomposites.
- Tae Whan Kim
- Yang Yang
- Wei Lek Kwan
